MMBT123S-7-F
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NPN BJT Transistor, 1A, 18V, 100MHz, SOT-23, SM
Дополнительная информация
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 1A continuous collector current, 18V collector-emitter breakdown voltage, and a 100MHz transition frequency. Housed in a compact SOT-23 plastic package, this silicon transistor offers a minimum DC current gain (hFE) of 150 and a maximum collector-emitter saturation voltage of 500mV. Operating temperature range spans from -55°C to 150°C, with a power dissipation of 300mW. This component is lead-free, RoHS compliant, and suitable for automotive applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | Automotive, AEC-Q101 |
| Weight | 0.000282oz |
| hFE Min | 150 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 18V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 18V |
| Max Collector Current | 1A |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 18V |
| Collector Emitter Breakdown Voltage | 18V |
| Collector Emitter Saturation Voltage | 500mV |
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