MMBT2222ALT1G

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MMBT2222ALT1G - Onsemi
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Краткое описание: NPN BJT Transistor 40V 0.6A 300MHz SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

General Purpose NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 40V Collector-Emitter Voltage (VCEO) and a 600mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. This RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Type General Purpose
Width 1.3mm
Height 0.94mm
Length 2.9mm
Series Automotive, AEC-Q101
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 300MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 225mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1V

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