MMBT2222AM3T5G

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MMBT2222AM3T5G - Onsemi
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Краткое описание: NPN BJT Transistor, 40V, 600mA, 300MHz, SOT-723
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor in a SOT-723-3 package. Features a collector-emitter breakdown voltage of 40V, collector current up to 600mA, and a maximum power dissipation of 640mW. Operates with a transition frequency of 300MHz and a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied on an 8000-piece tape and reel.
RoHS Compliant
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-723-3
Max Frequency 300MHz
RoHS Compliant Yes
Package Quantity 1
Power Dissipation 640mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 640mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V

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