MMBT2907A-7-F

Производится
MMBT2907A-7-F - Diodes
Увеличить
Краткое описание: PNP BJT Transistor, 60V VCEO, 600mA IC, 200MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 600mA Continuous Collector Current. Operates with a 200MHz transition frequency and offers a minimum hFE of 100. Packaged in a SOT-23 surface mount plastic package, this RoHS compliant component is designed for automotive and AEC-Q101 series applications.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 100
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-23
Max Frequency 200MHz
Current Rating -150mA
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 3000
Power Dissipation 350mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -600mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -1.6V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.