MMBT2907ALT1G

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MMBT2907ALT1G - Onsemi
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Краткое описание: PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 600mA. Offers a minimum DC current gain (hFE) of 75 and a transition frequency (fT) of 200MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. Supplied on a 3000-piece tape and reel.
RoHS Compliant
Type General Purpose
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 75
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 200MHz
Current Rating -600mA
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage -60V
Collector Emitter Saturation Voltage -1.6V

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