MMBT2907AT-7-F

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MMBT2907AT-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-523
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -600mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in an ultra-small SOT-523 plastic package for surface mounting, with a maximum power dissipation of 150mW. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 0.8mm
Height 0.75mm
Length 1.6mm
Series Automotive, AEC-Q101
Weight 7.1E-05oz
hFE Min 100
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-523
Max Frequency 200MHz
Current Rating -600mA
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 3000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Max Collector Current 600mA
Max Power Dissipation 150mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -600mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -1.6V

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