MMBT3904-7-F

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MMBT3904-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-23, SMD
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage and 200mA continuous collector current. Operates with a maximum power dissipation of 350mW and a transition frequency of 300MHz. Packaged in a SOT-23 surface mount plastic package, this silicon transistor is RoHS compliant and suitable for automotive applications.
ECCN EAR99
RoHS ROHS3 Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Power - Max 300 mW
Package/Case SOT-23
Reach Status REACH Unaffected
Max Frequency 300MHz
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 350mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 300mW
Frequency - Transition 300MHz
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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