MMBT3904WT1G

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MMBT3904WT1G - Onsemi
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Краткое описание: NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SC-70
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a SC-70 (SOT-323) 3-lead package, designed for general-purpose applications. Features a collector-emitter voltage (VCEO) of 40V, maximum collector current of 200mA, and a transition frequency (fT) of 300MHz. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 150mW. Packaged in a 3000-piece tape and reel, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
RoHS Compliant
Type General Purpose
Width 0.053inch
Height 0.035inch
Length 0.086inch
hFE Min 40
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SC
Max Frequency 300MHz
Current Rating 8.6A
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 150mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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