MMBT4124-7-F

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MMBT4124-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 25V VCEO, 200mA IC, 300MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor (BJT) for switching applications, featuring a 25V collector-emitter breakdown voltage and 200mA continuous collector current. This surface-mount device operates with a maximum power dissipation of 300mW and a transition frequency of 300MHz. It is housed in a compact SOT-23 plastic package, designed for automated assembly with gull-wing terminals. Compliant with RoHS and REACH SVHC standards, this component is suitable for automotive applications.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 120
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
JESD-30 Code R-PDSO-G3
Package/Case SOT-23
Max Frequency 300MHz
Package Shape Rectangular
Surface Mount Yes
Terminal Form Gull Wing
Current Rating 200mA
RoHS Compliant Yes
Terminal Finish Tin
DC Rated Voltage 25V
Package Quantity 3000
Power Dissipation 300mW
Terminal Position DUAL
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 300MHz
Max Breakdown Voltage 25V
Max Collector Current 200mA
Max Power Dissipation 300mW
Package Body Material Plastic
Gain Bandwidth Product 300MHz
Transistor Application SWITCHING
DC Current Gain-Min (hFE) 60
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Moisture Sensitivity Level 1
Emitter Base Voltage (VEBO) 5V
Transistor Element Material SILICON
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 30V
Collector-emitter Voltage-Max 300mV
Peak Reflow Temperature (Cel) 260°C
Collector Emitter Voltage (VCEO) 25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 300mV
Time @ Peak Reflow Temperature-Max (s) 10s

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