MMBT4124LT1G

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MMBT4124LT1G - Onsemi
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Краткое описание: NPN BJT 25V 200mA 300MHz SOT-23 Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 25V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a 300MHz transition frequency and a minimum hFE of 120. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. Packaged in a 3000-piece tape and reel.
RoHS Compliant
hFE Min 120
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 300MHz
Current Rating 200mA
RoHS Compliant Yes
DC Rated Voltage 20V
Package Quantity 3000
Power Dissipation 300W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 25V
Max Collector Current 200mA
Max Power Dissipation 225mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 30V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 300mV

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