MMBT4401-7-F

Производится
MMBT4401-7-F - Diodes
Увеличить
Краткое описание: NPN BJT Transistor, 40V, 600mA, 250MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage, 600mA continuous collector current, and a 250MHz transition frequency. Housed in a compact SOT-23 plastic package, this component offers a minimum hFE of 100 and a maximum power dissipation of 300mW. Operating temperature range spans from -55°C to 150°C, with AEC-Q101 compliance.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 100
Polarity NPN
Frequency 250MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 250MHz
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 310mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 250MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 600mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 750mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.