MMBT4401LT1G

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MMBT4401LT1G - Onsemi
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Краткое описание: NPN BJT Transistor 40V 600mA 250MHz SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor in a SOT-23-3 package. Features a 40V collector-emitter breakdown voltage and a 600mA maximum collector current. Offers a 250MHz transition frequency and a minimum hFE of 20. Maximum power dissipation is 300mW, with an operating temperature range of -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 20
Polarity NPN
Frequency 250MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 250MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 250MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 750mV

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