MMBT4401T-7
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NPN BJT Transistor, 40V, 600mA, 250MHz, SOT-523
Дополнительная информация
NPN silicon bipolar junction transistor for general-purpose switching and amplification. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Operates with a 250MHz gain bandwidth product and a minimum hFE of 100. Housed in an ultra-small SOT-523 plastic package for surface mounting, with dimensions of 1.6mm length, 0.8mm width, and 0.75mm height. Rated for operation from -55°C to +150°C with a maximum power dissipation of 150mW.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Weight | 7.1E-05oz |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Package/Case | SOT-523 |
| Current Rating | 600mA |
| RoHS Compliant | No |
| DC Rated Voltage | 40V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 600mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Breakdown Voltage | 40V |
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