MMBT4401T-7-F
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 40V, 600mA, 250MHz, SOT-523
Дополнительная информация
NPN silicon bipolar junction transistor in a SOT-523 surface mount package. Features a 40V collector-emitter breakdown voltage (VCEO) and a 600mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 250MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Weight | 7.1E-05oz |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-523 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 600mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
