MMBT4403-7-F

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MMBT4403-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 40V VCEO, 600mA IC, 200MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V Collector Emitter Breakdown Voltage (VCEO) and a 40V Collector Base Voltage (VCBO). Offers a continuous collector current of -600mA and a transition frequency of 200MHz. Housed in a compact SOT-23 plastic package, this silicon transistor is AEC-Q101 qualified and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 100
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 200MHz
Current Rating -600mA
RoHS Compliant Yes
DC Rated Voltage -40V
Package Quantity 3000
Power Dissipation 350mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -600mA
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -750mV

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