MMBT4403LT3G

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MMBT4403LT3G - Onsemi
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Краткое описание: PNP BJT Transistor, 40V, 600mA, 200MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 40V, a continuous collector current (IC) of 600mA, and a transition frequency (fT) of 200MHz. Offers a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 225mW. Operates across a temperature range of -55°C to 150°C. Packaged on a 10000-unit tape and reel.
RoHS Compliant
Width 2.64mm
Height 1.11mm
Length 3.04mm
hFE Min 30
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 200MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage -40V
Package Quantity 10000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 225mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -750mV

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