MMBT4403T-7-F
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Краткое описание:
PNP BJT Transistor, 40V, 600mA, 200MHz, SOT-523
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -600mA. Operates with a maximum power dissipation of 150mW and a transition frequency of 200MHz. Packaged in an ultra-small SOT-523 surface-mount plastic package, this device is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Weight | 7.1E-05oz |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-523 |
| Max Frequency | 200MHz |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -600mA |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -750mV |
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