MMBT5401-7-F
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PNP BJT Transistor, 150V VCEO, 600mA IC, 300MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 150V collector-emitter breakdown voltage, 600mA maximum collector current, and a 300MHz transition frequency. This single-element transistor operates within a -55°C to 150°C temperature range and is housed in a compact SOT-23 plastic package. Compliant with RoHS and REACH SVHC standards, this component is suitable for automotive applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Series | Automotive, AEC-Q101 |
| Polarity | PNP |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Package/Case | SOT-23 |
| Max Frequency | 300MHz |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -150V |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
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