MMBT5401LT3G

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MMBT5401LT3G - Onsemi
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Краткое описание: PNP BJT Transistor, 150V, 500mA, 300MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage of -150V and a collector base voltage of -160V. Offers a maximum collector current of 500mA and a transition frequency of 300MHz. This RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
hFE Min 50
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 300MHz
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -150V
Package Quantity 10000
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 150V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) -160V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) -150V
Collector Emitter Breakdown Voltage 150V
Collector Emitter Saturation Voltage -500mV

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