MMBT5551LT1G
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Краткое описание:
NPN BJT Transistor 160V 0.6A SOT-23
Дополнительная информация
NPN bipolar junction transistor in a SOT-23-3 package. Features a 160V collector-emitter breakdown voltage and a 600mA maximum collector current. Offers a low collector-emitter saturation voltage of 150mV and a minimum hFE of 80. Operates across a temperature range of -55°C to 150°C with a 300mW power dissipation. Packaged in tape and reel.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.94mm |
| Length | 2.9mm |
| hFE Min | 80 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 160V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 225mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 150mV |
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