MMBT589LT1G

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MMBT589LT1G - Onsemi
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Краткое описание: PNP BJT, 30V, 1A, 100MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 1A. Offers a low collector-emitter saturation voltage of -650mV and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C. This RoHS and Halogen Free component is supplied on a 3000-piece tape and reel.
RoHS Compliant
hFE Min 100
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
Current Rating -1A
RoHS Compliant Yes
DC Rated Voltage -30V
Package Quantity 1
Power Dissipation 710mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Max Collector Current 1A
Max Power Dissipation 310mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 650mV
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage -650mV

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