MMBT6427-7-F
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NPN BJT Transistor, 40V VCEO, 500mA IC, SOT-23
Дополнительная информация
NPN silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Offers a high minimum DC current gain (hFE) of 10000 and a low collector-emitter saturation voltage of 1.2V. Packaged in a compact SOT-23 plastic package, this lead-free component operates across a wide temperature range of -55°C to 150°C and is AEC-Q101 qualified.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | Automotive, AEC-Q101 |
| Weight | 0.000282oz |
| hFE Min | 10000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 3000 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
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