MMBT6429LT1G

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MMBT6429LT1G - Onsemi
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Краткое описание: NPN BJT Transistor, 45V VCEO, 200mA IC, 700MHz fT, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and 200mA Max Collector Current. Offers a minimum DC current gain (hFE) of 500 and a transition frequency of 700MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. This component is RoHS and Halogen Free.
RoHS Compliant
Width 1.4mm
Height 1.01mm
Length 3.04mm
hFE Min 500
Polarity NPN
Frequency 700MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 700MHz
Current Rating 200mA
RoHS Compliant Yes
DC Rated Voltage 45V
Package Quantity 1
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 700MHz
Max Breakdown Voltage 45V
Max Collector Current 200mA
Max Power Dissipation 225mW
Gain Bandwidth Product 700MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 55V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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