MMBTA05-7-F

Производится
MMBTA05-7-F - Diodes
Увеличить
Краткое описание: NPN BJT Transistor, 60V VCEO, 500mA IC, 100MHz, SOT-23, SMD
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor for surface mount applications. Features a 60V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 100MHz. Packaged in a compact SOT-23 plastic package, this component is RoHS and REACH SVHC compliant, operating across a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 100
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 3000
Power Dissipation 350mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Breakdown Voltage 60V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 4V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 250mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.