MMBTA06-7-F

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MMBTA06-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 80V VCEO, 500mA IC, 100MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current. Operates with a transition frequency of 100MHz and a minimum hFE of 100. Housed in a compact SOT-23 plastic package, this silicon transistor is RoHS compliant and AEC-Q101 qualified.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 100
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-23
Max Frequency 100MHz
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 80V
Package Quantity 3000
Power Dissipation 350mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 4V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 250mV

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