MMBTA28-7-F
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Краткое описание:
NPN BJT Transistor, 80V, 500mA, SOT-23, 125MHz
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA maximum collector current (IC). Offers a high minimum DC current gain (hFE) of 10000 and a transition frequency of 125MHz. Packaged in a SOT-23 surface-mount plastic package, this component operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | Automotive, AEC-Q101 |
| Weight | 0.000282oz |
| hFE Min | 10000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 125MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.5V |
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