MMBTA42-7-F

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MMBTA42-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 300V VCEO, 500mA IC, 50MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor for surface mount applications. Features a 300V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 50MHz transition frequency and offers a minimum DC current gain (hFE) of 40. Encased in a compact SOT-23 plastic package, this RoHS compliant component is rated for a maximum power dissipation of 300mW and operates across a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 40
Polarity NPN
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-23
Max Frequency 50MHz
Current Rating 200mA
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 500mV

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