MMBTA42LT3G

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MMBTA42LT3G - Onsemi
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Краткое описание: NPN BJT 300V 500mA SOT-23 Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

High voltage NPN bipolar junction transistor in a SOT-23-3 package. Features a 300V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 50MHz. Operates across a wide temperature range from -55°C to 150°C. Supplied on a 10000-piece tape and reel, this RoHS compliant component is lead-free.
RoHS Compliant
hFE Min 25
Polarity NPN
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 10000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Max Collector Current 500mA
Max Power Dissipation 225mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 500mV

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