MMBTA55
Снят с производства
Увеличить
Краткое описание:
PNP BJT Transistor, 60V, 500mA, 50MHz, SOT-23, SM
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 50MHz. Packaged in a compact SOT-23 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C with a power dissipation of 350mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.93mm |
| Length | 2.9mm |
| Weight | 0.03g |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 50MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -4V |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
