MMBTA56-7-F

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MMBTA56-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 80V VCEO, 500mA IC, 50MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector Emitter Breakdown Voltage (VCEO) and 80V Collector Base Voltage (VCBO). Offers a continuous collector current of -500mA and a maximum power dissipation of 300mW. Operates within a temperature range of -55°C to 150°C with a transition frequency of 50MHz. Packaged in a SOT-23 surface-mount plastic package, this RoHS and REACH SVHC compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 100
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 50MHz
Current Rating -100mA
RoHS Compliant Yes
DC Rated Voltage -80V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 50MHz
Max Breakdown Voltage 80V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 4V
Continuous Collector Current -500mA
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage -250mV

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