MMBTA56LT1G
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PNP BJT Transistor, 80V, 500mA, 50MHz, SOT-23
Дополнительная информация
PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter breakdown voltage of -80V, a maximum collector current of 500mA, and a transition frequency of 50MHz. Offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. Supplied in a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.94mm |
| Length | 2.9mm |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 50MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 225mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | -80V |
| Collector Emitter Saturation Voltage | -250mV |
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