MMBTA56WT1G
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PNP BJT Transistor, 80V, 500mA, 50MHz, SC-70
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in an SC-70 (SOT-323) 3-lead package, supplied on a 3000-piece tape and reel. Features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 50MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 150mW. This RoHS compliant component is designed for general-purpose amplification and switching applications.
| RoHS | Compliant |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
