MMBTA92-7-F

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MMBTA92-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 300V VCEO, 500mA IC, 50MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a 300V Collector Base Voltage (VCBO). Offers a continuous collector current of -200mA and a maximum collector current of 500mA, with a low collector-emitter saturation voltage of -500mV. Operates with a minimum hFE of 40 and a transition frequency of 50MHz. Packaged in a RoHS compliant SOT-23 surface mount plastic package.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series Automotive, AEC-Q101
Weight 0.000282oz
hFE Min 40
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 50MHz
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -300V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -200mA
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage -500mV

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