MMDT2222A-7-F

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MMDT2222A-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 40V VCEO, 0.6A IC, 300MHz, 2-Element, SOT-363
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 600mA. Operates with a minimum hFE of 100 and a transition frequency of 300MHz. Housed in a compact SOT-363 surface mount plastic package, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-363
Max Frequency 300MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 600mA
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1V

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