MMDT2227-7-F

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MMDT2227-7-F - Diodes
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Краткое описание: NPN/PNP BJT, 600mA, 40V, 300MHz, SOT-363
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

This is a dual-element, surface-mount bipolar junction transistor (BJT) featuring NPN and PNP polarity. It offers a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current of 600mA. The transistor operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in a SOT-363 plastic case, it is designed for switching applications and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity NPN, PNP
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
JESD-30 Code R-PDSO-G6
Package/Case SOT-363
Max Frequency 300MHz
Package Shape Rectangular
Surface Mount Yes
Terminal Form Gull Wing
Current Rating 600mA
RoHS Compliant Yes
Terminal Finish Tin
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 200mW
Terminal Position DUAL
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Max Collector Current 600mA
Max Power Dissipation 200mW
Package Body Material Plastic
Gain Bandwidth Product 300MHz
Transistor Application SWITCHING
DC Current Gain-Min (hFE) 40
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Moisture Sensitivity Level 1
Emitter Base Voltage (VEBO) 6V
Transistor Element Material SILICON
Continuous Collector Current 600mA
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 1V
Peak Reflow Temperature (Cel) 260°C
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1V
Time @ Peak Reflow Temperature-Max (s) 10s

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