MMDT2907A-7-F
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PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-363
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, featuring a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 600mA Continuous Collector Current. This dual-element transistor operates with a 200MHz transition frequency and a minimum hFE of 100. Packaged in an ultra-small, 6-lead SOT-363 plastic surface-mount package, it offers a maximum power dissipation of 200mW and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -600mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
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