MMDT3904V-7

Не рекомендуется для новых проектов
MMDT3904V-7 - Diodes
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Краткое описание: NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-563
Производитель Diodes
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

NPN bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and 200mA continuous collector current. This surface mount device offers a 300MHz transition frequency and a minimum hFE of 100. Housed in an ultra-small SOT-563 plastic package, it operates across a temperature range of -55°C to 150°C with a 200mW power dissipation. This 2-element transistor is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.2mm
Height 0.6mm
Length 1.6mm
Weight 0.000106oz
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-563
Current Rating 200mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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