MMDT3946-7

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MMDT3946-7 - Diodes
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Краткое описание: NPN/PNP BJT Transistor, 40V, 200mA, 300MHz, SOT-363
Производитель Diodes
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Dual NPN/PNP bipolar junction transistor (BJT) for small signal applications. Features 40V collector-emitter breakdown voltage and 200mA continuous collector current. Operates with a 300MHz gain bandwidth product and 250MHz transition frequency. Housed in an ultra-small SOT-363 plastic package for surface mounting, with a minimum hFE of 100. Rated for operation from -55°C to 150°C.
RoHS Not Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity NPN, PNP
Lead Free Contains Lead
Packaging Cut Tape
Package/Case SOT-363
Current Rating 200mA
RoHS Compliant No
DC Rated Voltage 40V
Package Quantity 3000
Reach SVHC Compliant Yes
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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