MMDT3946-7-F

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MMDT3946-7-F - Diodes
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Краткое описание: NPN/PNP BJT, 40V, 200mA, 300MHz, SOT-363
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

This surface mount bipolar junction transistor (BJT) is a 2-element NPN/PNP silicon device designed for switching applications. It features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V. The transistor operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Packaged in a SOT-363 plastic case, it offers a maximum power dissipation of 200mW and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity NPN, PNP
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
JESD-30 Code R-PDSO-G6
Package/Case SOT-363
Max Frequency 300MHz
Package Shape Rectangular
Surface Mount Yes
Terminal Form Gull Wing
Current Rating 200mA
RoHS Compliant Yes
Terminal Finish Tin
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 200mW
Terminal Position DUAL
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 200mW
Package Body Material Plastic
Gain Bandwidth Product 300MHz
Transistor Application SWITCHING
DC Current Gain-Min (hFE) 30
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Moisture Sensitivity Level 1
Emitter Base Voltage (VEBO) 6V
Transistor Element Material SILICON
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Peak Reflow Temperature (Cel) 260°C
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV
Time @ Peak Reflow Temperature-Max (s) 10s

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