MMDT4146-7-F
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NPN/PNP BJT, 25V, 200mA, 300MHz, SOT-363
Дополнительная информация
Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 2-element configuration. This silicon transistor offers a maximum collector current of 200mA and a collector-emitter breakdown voltage of 25V. With a transition frequency of 250MHz and a gain bandwidth product of 300MHz, it is suitable for high-frequency applications. The ultra-small plastic package (SOT-363) measures 2.2mm in length, 1.35mm in width, and 1mm in height. This RoHS and REACH SVHC compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 120 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Max Frequency | 300MHz |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 300MHz |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 300mV |
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