MMDT4401-7-F

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MMDT4401-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 40V VCEO, 600mA IC, 250MHz, SOT-363
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Operates with a 250MHz transition frequency and offers a minimum hFE of 100. Housed in an ultra-small, 6-pin plastic SOT-363 package, this lead-free component is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity NPN
Frequency 250MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-363
Max Frequency 250MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 200mW
Gain Bandwidth Product 250MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 600mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 750mV

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