MMDT4403-7-F
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PNP BJT Transistor, 40V, 600mA, 200MHz, SOT-363
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, featuring a 2-element configuration in an ultra-small, 6-lead plastic package (SOT-363). This surface-mount device offers a continuous collector current of -600mA and a collector-emitter breakdown voltage of 40V. It operates with a gain bandwidth product of 200MHz and a maximum power dissipation of 200mW. Designed for lead-free and RoHS compliant applications, it operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Max Frequency | 200MHz |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -600mA |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -750mV |
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