MMST3904-7-F

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MMST3904-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-323
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 200mA. Operates with a maximum power dissipation of 200mW and a transition frequency of 300MHz. Housed in an ultra-small SOT-323 plastic package for surface mounting, this RoHS compliant component offers a minimum DC current gain (hFE) of 100.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-323
Max Frequency 300MHz
Current Rating 200mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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