MMST4124-7-F
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NPN BJT Transistor, 25V, 200mA, 300MHz, SOT-323
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage and 200mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 300MHz. Packaged in an ultra-small SOT-323 plastic surface-mount package. Operates from -55°C to +150°C and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 200mA |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 300mV |
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