MMST5401-7-F
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PNP BJT Transistor, 150V, 200mA, 300MHz, SOT-323
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V collector-emitter breakdown voltage (VCEO) and a 200mA maximum collector current (IC). Operates with a 300MHz transition frequency and a minimum hFE of 50. Packaged in an ultra-small SOT-323 plastic surface-mount package, this silicon transistor is RoHS compliant and operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 50 |
| Polarity | PNP |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Max Frequency | 300MHz |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -150V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
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