MMSTA06-7-F
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NPN BJT Transistor, 80V VCEO, 500mA IC, 100MHz fT, SOT-323
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current. Operates with a 100MHz transition frequency and 100 minimum hFE. Housed in an ultra-small, plastic SOT-323 surface-mount package. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
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