MMSTA42-7-F

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MMSTA42-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 300V VCEO, 200mA IC, 50MHz, SOT-323
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor for small signal applications. Features a 300V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 200mA. Operates with a 50MHz transition frequency and a minimum hFE of 25. Housed in an ultra-small, plastic SOT-323 surface mount package. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 25
Polarity NPN
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-323
Current Rating 200mA
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Max Collector Current 200mA
Max Power Dissipation 200mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 500mV

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