MMSTA55-7-F

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MMSTA55-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 60V, 500mA, 50MHz, SOT-323
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Packaged in an ultra-small SOT-323 plastic surface mount package, this component is RoHS and REACH SVHC compliant, operating from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-323
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 1
Power Dissipation 200mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 50MHz
Max Breakdown Voltage 60V
Max Collector Current 500mA
Max Power Dissipation 200mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -4V
Continuous Collector Current -500mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -250mV

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