MMSTA64-7-F
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PNP BJT Transistor, 30V VCEO, 500mA IC, 125MHz, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 500mA. Offers a high minimum DC current gain (hFE) of 10000 and a transition frequency of 125MHz. Packaged in an ultra-small SOT-323 plastic package for surface mounting, with dimensions of 2.2mm length, 1.35mm width, and 1mm height. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 10000 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 125MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
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