MMUN2211LT3G

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MMUN2211LT3G - Onsemi
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Краткое описание: NPN BJT Transistor, 50V, 100mA, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. Offers a low collector-emitter saturation voltage of 250mV and a minimum hFE of 35. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 246mW. This RoHS and Halogen Free component is supplied on a 10000-piece tape and reel.
RoHS Compliant
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 35
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 1
Power Dissipation 246mW
Max Output Current 100mA
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 246mW
Operating Supply Voltage 50V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

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